![]() ![]() The unique features of PhC cavities are exploited to demonstrate a new type of laser that is capable of producing output powers of several milliwatts. In this article, we demonstrate a hybrid laser architecture that comprises a III–V gain element and a silicon photonic crystal (PhC) cavity-based resonant reflector. Furthermore, precise wavelength control over a range of ambient temperatures is a requirement for WDM and optical sensing systems, which is a fundamental problem for uncooled operation. However, uncooled operation is a prerequisite for cost-sensitive applications, but many lasers integrated on silicon still struggle to operate at temperatures above 50 ☌. Based on such schemes, a number of different laser configurations have been proposed and demonstrated 1, 2, 3. A commonly used method for circumventing the above problem is the combination of III–V materials with silicon via heterogeneous or hybrid integration. As a result, the most essential building block of an optical system, an efficient light emitter, remains absent in PICs based on silicon.Ĭhip-scale lasers are key elements for many applications, ranging from data communications, especially wavelength-division multiplexing (WDM) systems, to various optical sensing applications, such as trace-gas detection. Despite constant refinement of silicon photonics technology to meet the evolving requirements for applications, the poor light emission ability of silicon remains a constraint. Silicon photonics takes advantage of the mature complementary metal-oxide semiconductor (CMOS) infrastructure and processes and is actively pursued for the implementation of complex optical components and photonic integrated circuits (PICs) at low cost and high volumes. Our approach is fully compatible with existing fabrication and integration technologies, providing a practical route to integrated lasing in wavelength-sensitive schemes. The heat generated in this manner creates a tuning effect in the wavelength-selective element, which can be used to offset external temperature fluctuations without the use of active cooling. The high power density in the laser cavity results in a significant enhancement of the nonlinear absorption in silicon in the high Q-factor PhC resonator. The emitted wavelength is set and controlled by a silicon PhC cavity-based reflective filter with the gain provided by a III–V-based reflective semiconductor optical amplifier (RSOA). We demonstrate a hybrid, silicon photonics-compatible photonic crystal (PhC) laser architecture that can be used to implement cost-effective, high-capacity light sources, with high side-mode suppression ratio and milliwatt output output powers. The need for miniaturized, fully integrated semiconductor lasers has stimulated significant research efforts into realizing unconventional configurations that can meet the performance requirements of a large spectrum of applications, ranging from communication systems to sensing.
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